 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1450 DESCRIPTION *With TO-66 package *Wide area of safe operation *High collector-emitter breakdown voltage :VCEO=150V(min) *Complement to type 2SA766 APPLICATIONS *For power amplifier and vertical output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=80 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 0.4 20 150 -65~200 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1450 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA; IE=0 IE=1mA; IC=0 150 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V A A ICBO Collector cut-off current VCB=150V;IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=0.1A ; VCE=5V 30 150 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1450 Fig.2 outline dimensions 3 |
Price & Availability of 2SC1450
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |